unisonic technologies co., ltd 12N60K-MT power mosfet www.unisonic.com.tw 1 of 7 copyright ? 2015 unisonic technologies co., ltd qw-r502-b06.f 12a, 600v n-channel power mosfet ? description the utc 12N60K-MT are n-channel enhancement mode power field effect transistors (mosfet) which are produced using utc?s proprietary, planar stripe, dmos technology. these devices are suited for high efficiency switch mode power supply. to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode the advanced technology has been especially tailored. ? features * r ds(on) < 0.70 ? @ v gs = 10 v, i d = 6 a * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 12n60kl-tf1-t 12n60kg-tf1-t to-220f1 g d s tube 12n60kl-tf2-t 12n60kg-tf2-t to-220f2 g d s tube 12n60kl-tf3t-t 12n60kg-tf3t-t to-220f3 g d s tube note: pin assignment: g: gate d: drain s: source (1) t: tube (2) tf1: to-220f1, tf2: to-220f2, tf3t: to-220f3 (3) l: lead free, g: halogen free and lead free 12n60kl-tf1-t (1)packing type (2)package type (3)green package ? marking
12N60K-MT power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-b06.f ? absolute maximum ratings (t c = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 600 v gate-source voltage v gss 30 v continuous i d 12 a drain current pulsed (note 2) i dm 48 a avalanche energy single pulsed (note 3) e as 420 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns power dissipation p d 51 w junction temperature t j +150 c operating temperature t opr -55 ~ +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating : pulse width limit ed by maximum junction temperature 3. l = 5.8mh, i as = 12a, v dd = 50v, r g = 25 ? , starting t j = 25c 4. i sd 12a, di/dt 200a/s, v dd bv dss starting t j = 25c ? thermal data parameter symbol rating unit junction to ambient ja 62.5 c/w junction to case jc 2.43 c/w ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0 v, i d = 250 a 600 v drain-source leakage current i dss v ds = 600 v, v gs = 0 v 1 a gate-source leakage current i gss v gs = 30 v, v ds = 0 v 100 na breakdown voltage temperature coefficient bv dss / t j i d =250a, referenced to 25c 0.7 v/c on characteristics gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds(on) v gs = 10v, i d = 6.0a 0.57 0.70 ? dynamic characteristics input capacitance c iss 1600 1900 pf output capacitance c oss 173 270 pf reverse transfer capacitance c rss v ds = 25 v, v gs = 0 v, f = 1mhz 10 18 pf switching characteristics turn-on delay time t d(on) 90 100 ns turn-on rise time t r 109 125 ns turn-off delay time t d(off) 190 210 ns turn-off fall time t f v dd = 30v, i d = 0.5a, r g = 25 ? (note 1, 2) 100 130 ns total gate charge q g 40 nc gate-source charge q gs 10.4 nc gate-drain charge q gd v ds = 50v,i d = 1.3a, v gs = 10 v (note 1, 2) 10 nc source- drain diode ratings and characteristics drain-source diode forward voltage v sd v gs = 0 v, i s = 12a 1.4 v maximum continuous drain-source diode forward current i s 12 a maximum pulsed drain-source diode forward current i sm 48 a notes: 1. pulse test : pulse width 300 s, duty cycle 2%. 2. essentially independent of operating temperature.
12N60K-MT power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-b06.f ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) - + v gs = p.w. period peak diode recovery dv/dt waveforms
12N60K-MT power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-b06.f ? test circuits and waveforms (cont.) switching test circuit switching waveforms 50k 0.3 f dut v ds same type as d.u.t. 10v 0.2 f 12v charge q gs q gd q g v gs 3ma v gs gate charge test circuit gate charge waveform unclamped inductive switching test circuit unclamped inductive switching waveforms
12N60K-MT power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-b06.f utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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